THE EPITAXIAL GROWTH OF THE CHROMIUM bcc (111) LAYERS*)


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Abstract

Cr/Tb/Cr thin films have been obtained by pulsed laser deposition (PLD) on sapphire (110) substrates. The crystal structure of the films was characterised in-situ by means of reflection high energy electron diffraction (RHEED) and Auger spectroscopy (AS) and ex-situ by X-ray grazing incidence diffraction (GID) and scanning tunnelling microscopy (STM). The deposition of chromium on the Tb(0001) layers at 300 °C was found to lead to the formation of three Cr(110) crystalline domains. Chromium deposited on Tb(0001) initially (first 50 Å) at room temperature and then at 300 °C grew epitaxially in the [111] direction and formed two Cr(111) crystalline domains shifted by 30°. Due to the lower density of the atoms in Cr(111) plane, compared to the Cr(110) and Cr(001) ones, this orientation is interesting for magnetic studies.

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