PREPARATION AND PROPERTIES OF THICK NOT INTENTIONALLY DOPED GaInP(As)/GaAs LAYERS FOR OPTOELECTRONIC APPLICATIONS*)

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Abstract

We report on liquid phase epitaxial growth of thick layers of GaInP(As) lattice matched to GaAs. Layers with thicknesses up to 7 μm were prepared in multi melt bin, step-cooling, one-phase configuration. Unintentionally doped layers, grown from moderate purity starting materials show significant decrease in the residual impurity level when erbium was added into the melt. Fundamental electrical and optical properties of the layers were investigated.

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