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The Ba(Zr0.35Ti0.65)O3 (BZT) thin films were deposited via sol-gel process on LaNiO3-coated silicon substrates. XRD showed that the crystallinity of BZT film grown on LaNiO3 coated silicon substrates is better than that of BZT film grown on Pt. Both films showed perovskite phase and polycrystalline structure. The temperature dependent dielectric measurements revealed that the thin films had the relaxor behavior and diffuse phase transition characteristics. The capacitor tuning was about 44% for each BZT film grown on LaNiO3/Pt and Pt electrodes at 1 MHz. Especially, the values of dielectric loss at 1 MHz ranged from ∼0.02 to 0.009 in the bias range of 0 to 514 kV/cm, respectively. The leakage currents density of thin films grown on LaNiO3/Pt and Pt electrodes at 300 kV/cm was about 8.5 × 10−7 and 1.1 × 10−5 A/cm2, respectively. This work demonstrates a potential use of BZT films for application in tunable microwave devices.