Evaluation of Impurity Concentration in Semiconductors from the Relaxation of Thermally Stimulated Currents

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Abstract

The rate equations of thermally stimulated currents due to isothermal detrapping are analyzed. The results demonstrate that, at small trap population, isothermal detrapping follows an exponential law, independent of the trapping rate: fast, slow, or intermediate (the trapping time is comparable to the recombination time). Expressions are derived for determining the density of charged traps in the course of detrapping and assessing the trap density from known trap parameters and thermally stimulated current spectra.

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