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The application of radical beams in the technology of wide-gap semiconductors is discussed. Radical-beam gettering epitaxy, a technique based on the annealing of II–VI (III–V) crystals in activated nonmetal vapor, is considered. This technique offers the possibility of growing both n- and p-type II–VI and III–V epilayers. The use of radical beams in conjunction with molecular-beam epitaxy and metalorganic vapor-phase epitaxy processes makes it possible to produce p-type materials via doping with acceptor impurities in the form of excited molecules or atoms. The reduced growth temperature allows one to fabricate heterostructures with atomically sharp junctions owing to the absence of interdiffusion.