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The Zn profile in AlxGa1 − xAs/GaAs (x = 0.2−0.4) quantum-well heteroepitaxial structures doped during growth by metalorganic chemical vapor deposition is modeled with allowance made for the diffusional broadening of the nominal doping profile. Experimentally determined carrier distributions in the heterostructures are used to refine the diffusion coefficient of Zn at a growth temperature of 770°C. The average value of DZn is determined to be ∼6.0 × 10−14 cm2/s. The position of the p–n junction in AlxGa1 − xAs/GaAs heterostructures is assessed as a function of the nominal Zn profile and growth rate. The ways of optimizing the doping profile are outlined.