In this investigation, PZT films were sputter-deposited on Si/SiO2/Ti/Pt substrates using a dual-target system. The dual targets Pb/PZT(PbZr0.54Ti0.46O3) and PbO/PZT(PbZr0.54Ti0.46O3) were used to reveal the effects of various lead compensation source materials on the microstructure and ferroelectric properties of the films. The structures of the films were characterized by X-ray diffractometry (XRD) and field emission scanning electron microscopy (FESEM). The chemical binding state was determined using X-ray photoelectron spectrometry (XPS). Ferroelectric polarizability was measured using a Radiant Technology RT66A tester. The influence of deposition temperatures on the microstructure and ferroelectric properties of the films was studied. Perovskite PZT films were successfully deposited using the Pb/PZT and the PbO/PZT dual target sputtering systems at a substrate temperature of between 500 and 580°C. Structural change was elucidated as a function of deposition temperatures and the lead sources were correlated with the ferroelectric properties of the film. The ferroelectric characteristics of the PZT films deposited using the PbO/PZT dual target were better than those of films deposited using the Pb/PZT dual target, because the former films had a higher bonding energy.