Phase Formations and Electrical Properties of Various (Bi, La)4Ti3O12 Thin Films by Chemical Solution Deposition

    loading  Checking for direct PDF access through Ovid


The phase formation and electrical properties of (Bi, La)4Ti3O12 (BLT) thin film and V-, Sm-doped BLT thin films prepared by the chemical solution deposition method on Pt/TiO2/SiO2/Si substrates have been investigated. It was observed that the microstructure and electrical properties of BLT thin films dramatically varied with V- and Sm-doping. The crystallinity and grain size of BLT thin films were definitely increased by V- and Sm-doping into BLT films, which resulted in the enhancement of remanent polarization in doped BLT films. The remanent polarization (Pr) of Sm-doped BLT films annealed for 3 min by an RTA system was about 9 μC/cm2. The V- and Sm-doped BLT films also exhibited good fatigue characteristics under bipolar stressing to 1010 cycles.

Related Topics

    loading  Loading Related Articles