Measurement of Microwave Dielectric Properties of Pb(Zr1−xTrx)O3 Thin Films

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Ferroelectric Pb(Zr1−xTix)O3 (PZT) thin films were prepared by sol-gel deposition method. The structural and surface morphologies were investigated using X-ray diffractometer and atomic force microscope. Microwave dielectric properties were obtained using co-circle electrode patterns, which were made by photolithography and etching process. The dielectric constant of PZT films was about 450 from 0.05–1 GHz range.

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