Preparation and Properties of Bi4 − xNdxTi3O12 Thin Films by Chemical Solution Deposition

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Neodymium-modified Bi4Ti3O12, (Bi, Nd)4Ti3O12 (BNT) ferroelectric thin films have been prepared on Pt/TiOx/SiO2/Si substrates using metal-organic precursor solutions by the chemical solution deposition method. The BNT precursor films crystallized into the Bi layered perovskite Bi4Ti3O12 (BIT) as a single-phase above 600°C. The synthesized BNT films revealed a random orientation having a strong 117 reflection, whereas non-substituted BIT thin films exhibited a random orientation with strong 00l diffractions. Among Bi4 − xNdxTi3O12 [x = 0.0, 0.5, 0.75, 1.0] thin films, Bi3.25Nd0.75Ti3O12 thin films showed a well-saturated P-E hysteresis loop with the highest Pr (22 μC/cm2) and a low Ec (69 kV/cm) at an applied voltage of 5 V. The Nd-substitution with the optimum amount for the Bi site in the BIT structure was effective not only for promoting the 117 preferred orientation but also for improving the microstructure and ferroelectric properties of the resultant films.

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