Crystal Growth and High Temperature Piezoelectricity of La3Ta0.5Ga5.5 − xAlxO14 Crystals

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Abstract

For the application of high temperature piezoelectric devices, Al3 + substituted La3Ta0.5Ga5.5O14 (LTG) crystals with chemical formula of La3Ta0.5Ga5.5 − xAlxO14 (LTGA) were synthesized and grown by μ-PD (Micro-pulling-down) and Czochralski technique. LTGA compound has been shown to exhibit congruent melting in a wide compositional range without destabilization of the melt during growth, while distribution coefficient of the substituted Al3+ ion was close to unity. LTGA crystals have shown preferable effects for temperature stability on piezoelectric properties in the range from R.T (room temperature) to 500°C.

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