New pathways for improved quantification of energy-dispersive X-ray spectra of semiconductors with multiple X-ray lines from thin foils investigated in transmission electron microscopy

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Abstract

Energy-dispersive X-ray spectroscopy is a method of analytical electron microscopy and can be used to determine the chemical composition of a sample. In transmission electron microscopy, thinned samples are investigated that the electron beam traverses. If the samples are very thin, X-ray absorption and fluorescence may be neglected, but for quantification of even slightly thicker samples both effects need to be taken into account. Usually, sample thickness and density need to be supplied to perform such an absorption correction, however, both are difficult to measure. Here, we compare theory and experiments for the semiconductors (In)GaAs and Si(Ge) and show that absorption corrections can be improved in three different ways:

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