Metallization studies on Ti3SiC2-based contacts on 6H-SiC

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Abstract

In this study, three different metals (Au, Al, and Pd) were investigated as possible metallization layers on top of titanium based electrical contacts on 6H-SiC. Experiments involved thermal stressing of contact structures and its effect on electrical and morphological contact properties. Gold proved to be stable up to 300 °C with good electrical properties. At 600 °C the films disintegrate within a matter of hours. Aluminium films are stable at 600 °C but the electrical contact resistance increases with annealing time. Palladium films are electrically and chemically stable at 600 °C.

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