Adherent and smooth amorphous GeBiSe films deposited by vacuum evaporation at substrate temperatures less than 30 °C have been studied for their structural and optical properties. The films were crystallized by thermal annealing and they were found to be polycrystalline in nature. A correlation between X-ray diffraction (XRD) data and surface topography is reported. Optical constants calculated from reflectance and transmittance data indicate semiconducting behaviour. The optical band gap of the as-deposited film is 1.0 eV. The measured optical contrast at 0.8 μm is 44%. No significant changes in the optical parameters have been observed after exposing the samples to laboratory ambient for a period of six months.