Characterization of CdTe, Cd0.96Zn0.04 and Zn-diffused CdTe by defect etching

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Abstract

The crystal quality of CdTe, Cd0.96Zn0.04Te and Zn-diffused CdTe slices containing 1 × 1022 cm−3 atoms of zinc at the surface of the slice was investigated by the technique of defect etching. In this investigation, the chemical etch. Inoue EAg-1 reagent, gave satisfactory results, with useful comparative values of the etch pit density obtained in these materials. The main result that was obtained was that the etch pit density in Zn-diffused CdTe was more than 10 times greater than in undiffused CdTe and that after the diffused layer had been removed the value was virtually the same as in undiffused CdTe.

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