The model of the pressure effect on the critical temperature Tc in high-temperature superconductors , earlier proposed by the present author and consisting in the increase of the pair wave function overlap with increase in pressure p that in its manifestations is equivalent to an increase in doping, is compared with the recent experimental data [1–4]. By making this model more precise for inhomogeneous specimens, we obtained the doping region near the optimal one where the critical temperature is independent of doping, and the pressure region where it is independent of pressure. It is shown that, as observed in [1,2], the dependence of dTc/dp on doping in HgBa2CuO4+δ after excluding the influence of the specimen's inhomogeneous structure is explained satisfactorily by the model of . So the introduction in [1,2] of a term in Tc proportional to p2 is unnecessary. An analogous comparison is made for YBa2Cu3O6+y.