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The highly 〈012〉-oriented LaNiO3 thin films were fabricated on SiO2 coated Si(111) wafers by pulsed laser deposition at 690°C with a well prepared target. The stability of the interface and the smoothness of the surface were confirmed by scanning electron microscopy and atomic force microscopy. The electrical resistivity of the films at 300 K is 2.6 × 10−5 Ωm. The results of this work suggest that the films can be applied to the bottom electrode of ferroelectric memory devices.