Issn Print: 0036-8075
Publication Date: 2013/07/12
ENGINEERING: Nanoscale Transistors—Just Around the Gate?
Cory D. Cress; Suman Datta
Author Information: Electronics Science and Technology Division, U.S. Naval Research Laboratory, Washington, DC 20375, USA.
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Advanced geometries for gate electrodes that reduce current leakage can decrease the size of high-performance transistors.