DEVICE TECHNOLOGY: MoS2 transistors with 1-nanometer gate lengths

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Abstract

Scaling of silicon (Si) transistors is predicted to fail below 5-nanometer (nm) gate lengths because of severe short channel effects. As an alternative to Si, certain layered semiconductors are attractive for their atomically uniform thickness down to a monolayer, lower dielectric constants, larger band gaps, and heavier carrier effective mass. Here, we demonstrate molybdenum disulfide (MoS2) transistors with a 1-nm physical gate length using a single-walled carbon nanotube as the gate electrode. These ultrashort devices exhibit excellent switching characteristics with near ideal subthreshold swing of ˜65 millivolts per decade and an On/Off current ratio of ˜106. Simulations show an effective channel length of ˜3.9 nm in the Off state and ˜1 nm in the On state.

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