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The use of hot electron phenomena is very attractive from the point of view of making fast, high performance infrared detectors for the giga hertz – tera hertz frequency range. Low temperature superconductors at present provide efficient materials in this area but with the constraint of using nano meter thin films and milli Kelvin operating temperatures. This paper explores the possibility of exploiting high temperature superconductor materials for the hot electron far infrared bolometer, using 77 K as the operating temperature and micron thick films. Two temperature (electron and phonon) time dependent heat transfer equations involving electron and phonon interactions within the sensor lattice and the heat exchange with the substrate are developed and solved. A detailed mathematical analytic expression for the responsivity is presented. Computational analysis of responsivity choosing various combinations of involved parameters is carried out. Some important results for a 1 μ thick sensor of 1 mm × 1 mm crosssectional area are presented.